NXP Semiconductors A3M38SL039 Manual

NXP Semiconductors A3M38SL039 Manual Manual pdf 1 page image

NXP reserves the right to change the detail specifications as may be required to permitimprovements in the design of its products.The A3M38SL039 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD LTE and 5G systems.The module integrates an autobias feature with the option to overwriteproduction settings. Autobias automatically sets and regulates transistor biasover temperature upon power up. An integrated sensor for monitoringtemperature is also present. Communications to the module can beaccomplished via either I 2 C or SPI.3600–4000 MHzTypical LTE Performance: Pout = 8 W Avg., VDD = 30 Vdc, 1 × 20 MHz LTE,Input Signal PAR = 8 dB @ 0.01% Probability on CCDF.1Carrier CenterFrequencyGain(dB)ACPR(dBc)PAE(%)3610 MHz 28.2 –29.1 32.73800 MHz 28.2 –28.9 34.13990 MHz 28.1 –27.2 31.81. All data measured with device soldered in NXP reference circuit.Features• Advanced high performance in-package Doherty• Fully matched (50 ohm input/output, DC blocked)• Designed for low complexity digital linearization systems• Autobias on power up• Temperature sensing• Digital interface (I2 C or SPI)• Embedded registers and DACs for setting bias conditions• Tx Enable control pin for TDD operationA3M38SL039IA3M38SL039S3600–4000 MHz, 28 dB,8 W Avg. Airfast PowerAmplifier Module withAutobias Control10 mm × 8 mm ModuleA3M38SL039Airfast Power Amplifier Module with Autobias ControlRev. 0 — September 2022 Data Sheet: Technical Data