NXP Semiconductors A3M39SL039 Datasheet

NXP Semiconductors A3M39SL039 Datasheet Manual pdf 1 page image

NXP reserves the right to change the detail specifications as may be required to permitimprovements in the design of its products.The A3M39SL039 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD and FDD LTEsystems. The module integrates an autobias feature with the option tooverwrite production settings. Autobias automatically sets and regulatestransistor bias over temperature upon power up. An integrated sensor formonitoring temperature is also present. Communications to the module canbe accomplished via either I 2 C or SPI.3700–3980 MHzTypical LTE Performance: Pout = 8 W Avg., VDD = 30 Vdc, 1 × 20 MHz LTE,Input Signal PAR = 8 dB @ 0.01% Probability on CCDF.1Carrier CenterFrequencyGain(dB)ACPR(dBc)PAE(%)3710 MHz 28.1 –33.0 33.03840 MHz 28.0 –35.0 34.03970 MHz 28.1 –32.0 34.01. All data measured with device soldered in NXP reference circuit.Features• Advanced high performance in-package Doherty• Fully matched (50 ohm input/output, DC blocked)• Designed for low complexity analog or digital linearization systems• Autobias on power up• Temperature sensing• Digital interface (I2 C or SPI)• Embedded registers and DACs for setting bias conditions• Tx Enable control pin for TDD operationA3M39SL039IA3M39SL039S3700–3980 MHz, 28 dB,8 W Avg. Airfast PowerAmplifier Module withAutobias Control10 mm × 8 mm ModuleA3M39SL039Airfast Power Amplifier Module with Autobias ControlRev. 0 — March 2022 Data Sheet: Technical Data