NXP Semiconductors PBLS4004D Product Data Sheet
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1. Product profile1.1 General descriptionPNP low V CEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)plastic package.1.2 Featuresn Low V CEsat (BISS) and resistor-equipped transistor in one packagen Low threshold voltage (< 1 V) compared to MOSFETn Low drive power requiredn Space-saving solutionn Reduction of component count1.3 Applicationsn Supply line switchesn Battery charger switchesn High-side switches for LEDs, drivers and backlightsn Portable equipment1.4 Quick reference data[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O 3, standard footprint.[2] Pulse test: t p ≤ 300 μs; δ ≤ 0.02.PBLS4004D40 V PNP BISS loadswitchRev. 03 — 6 January 2009 Product data sheetTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max UnitTR1; PNP low V CEsat transistorVCEO collector-emitter voltage open base - - −40 VIC collector current [1] - - −1 AR CEsat collector-emitter saturationresistanceIC = −500 mA;IB = −50 mA[2] - 240 340 mΩTR2; NPN resistor-equipped transistorVCEO collector-emitter voltage open base - - 50 VIO output current - - 100 mAR1 bias resistor 1 (input) 15.4 22 28.6 kΩR2/R1 bias resistor ratio 0.8 1 1.2 |
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