Panasonic 2SA2162 Specification Sheet

Panasonic 2SA2162 Specification Sheet Manual pdf 1 page image

TransistorsPublication date : December 2004 SJC00323AED 12SA2162Silicon PNP epitaxial planar typeFor general amplificationComplementary to 2SC6036 Features Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automaticinsertion through the tape packing Absolute Maximum Ratings Ta = 25°CParameter Symbol Rating UnitCollector-base voltage (Emitter open) VCBO –15 VCollector-emitter voltage (Base open) VCEO –12 VEmitter-base voltage (Collector open) VEBO –5 VCollector current IC –500 mAPeak collector current ICP –1 ACollector power dissipation PC 100 mWJunction temperature Tj 125 °CStorage temperature Tstg –55 to +125 °C Electrical Characteristics Ta = 25°C±3°CParameter Symbol Conditions Min Typ Max UnitCollector-base voltage (Emitter open) VCBO IC = –10 μA, IE = 0 –15 VCollector-emitter voltage (Base open) VCEO IC = –1 mA, IB = 0 –12 VEmitter-base voltage (Collector open) VEBO IE = –10 μA, IC = 0 –5 VCollector-base cutoff current (Emitter open) ICBO VCB = –10 V, IE = 0 – 0.1 μAForward current transfer ratio hFE VCE = –2 V, IC = –10 mA 270 680 Collector-emitter saturation voltage VCE(sat) IC = –200 mA, IB = –10 mA –250 mVTransition frequency fT VCB = –2 V, IE = 10 mA, f = 200 MHz 200 MHzCollector output capacitance(Common base, input open circuited) Cob VCB = –10 V, f = 1 MHz 4.5 pFNote) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.Unit: mm1: Base2: Emitter3: Collecter SSSMini3-F1 Package1.20±0.050.52±0.030 to 0.010.15 max.5°0.15 min.0.80±0.050.15 min.0.33(0.40)(0.40)1 235°0.80±0.051.20±0.05+0.05−0.02 0.10+0.05−0.020.23+0.05−0.02Marking Symbol : 2UThis product complies with the RoHS Directive (EU 2002/95/EC).

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