Switching DiodesPublication date: September 2006 SKF00070AED 1This product complies with RoHS Directive (EU 2002/95/EC).MAU2111Silicon epitaxial planar typeFor high speed switching circuits Features Optimum for high-density mounting Short reverse recovery time trr Small terminal capacitance Ct Absolute Maximum Ratings Ta = 25°CParameter Symbol Rating UnitReverse voltage VR 80 VMaximum peak reverse voltage VRM 80 VForward current IF 100 mAForward current (Average) IFM 225 mANon-repetitive peak forward surge current * IFSM 500 mAJunction temperature Tj 150 °CStorage temperature Tstg –55 to +150 °CNote) *: t = 1 s Electrical Characteristics Ta = 25°C±3°CParameter Symbol Conditions Min Typ Max UnitForward current VF IF = 100 mA 0.95 1.2 VReverse voltage VR IR = 100 mA 80 VReverse current IR VR = 75 V 100 nATerminal capacitance Ct VR = 0, f = 1 MHz 0.6 2 pFReverse recovery time * trrIF = 10 mA, VR = 6 V, Irr = 0.1 IR ,RL = 100 W 3.0 nsNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. Absolute frequency of input and output is 100 MHz.3. *: trr measurement circuitBias Application Unit (N-50BU)90%Pulse Generator(PG-10N)Rs = 50 ΩWave Form Analyzer(SAS-8130)Ri = 50 Ωtp = 2 μstr = 0.35 nsδ = 0.05IF = 10 mAV R = 6 VRL = 100 Ω10%Input Pulse Output PulseIrr = 0.1 IRtr tptrrV RIFttAMarking Symbol: 11Unit: mm1: Anode2: Cathode USSMini2-F1 Package0.38 +0.02−0.030.13 +0.05−0.020.2 +0.05−0.020.60±0.050.85±0.05 0.075±0.051.0±0.050.075±0.050 to 0.020.15 max.5°5°21