Panasonic 2SA1018 Specification Sheet

Panasonic 2SA1018 Specification Sheet Manual pdf 1 page image

Transistors1Publication date: January 2003 SJC00008BED2SA1018Silicon PNP epitaxial planar typeFor general amplificationComplementary to 2SC1473■ Features• High collector-emitter voltage (Base open) V CEO■ Absolute Maximum Ratings T a = 25°CParameter Symbol Rating UnitCollector-base voltage (Emitter open) V CBO −250 VCollector-emitter voltage (Base open) V CEO −200 VEmitter-base voltage (Collector open) V EBO −5 VCollector current IC −70 mAPeak collector current ICP −100 mACollector power dissipation PC 750 mWJunction temperature T j 150 °CStorage temperature Tstg −55 to +150 °CParameter Symbol Conditions Min Typ Max UnitCollector-emitter voltage (Base open) V CEO IC = −100 μA, I B = 0 −200 VEmitter-base voltage (Collector open) V EBO IE = −1 μA, I C = 0 −5 VCollector-emitter cut-off current (Base open) ICEO V CE = −120 V, I B = 0 −1 μAForward current transfer ratio * h FE V CE = −10 V, I C = −5 mA 60 220 Collector-emitter saturation voltage V CE(sat) IC = −50 mA, I B = −5 mA −1.5 VTransition frequency f T VCB = −10 V, IE = 10 mA, f = 200 MHz 50 MHzCollector output capacitance C ob V CB = −10 V, I E =0, f = 1 MHz 10 pF(Common base, input open circuited)■ Electrical Characteristics T a = 25°C ± 3°CUnit: mmNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. *: Rank classification5.0±0.20.7±0.10.45+0.15–0.12.5+0.6–0.20.45+0.15–0.12.51 2 3+0.6–0.24.0±0.25.1±0.212.9±0.52.3±0.2 0.7±0.21 : Emitter2 : Collector3 : BaseTO-92-B1 PackageRank Q Rh FE 60 to 150 100 to 220This product complies with the RoHS Directive (EU 2002/95/EC).

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