Panasonic 2SA1309A Specification Sheet

Panasonic 2SA1309A Specification Sheet Manual pdf 1 page image

Transistors1Publication date: March 2003 SJC00016BED2SA1309ASilicon PNP epitaxial planar typeFor low-frequency amplificationComplementary to 2SC3311A■ Features• High forward current transfer ratio hFE• Allowing supply with the radial taping• Optimum for high-density mounting■ Absolute Maximum Ratings T a = 25°CParameter Symbol Rating UnitCollector-base voltage (Emitter open) V CBO −60 VCollector-emitter voltage (Base open) V CEO −50 VEmitter-base voltage (Collector open) V EBO −7 VCollector current IC −100 mAPeak collector current ICP −200 mACollector power dissipation PC 300 mWJunction temperature T j 150 °CStorage temperature Tstg −55 to +150 °CParameter Symbol Conditions Min Typ Max UnitCollector-base voltage (Emitter open) V CBO IC = −10 μA, I E = 0 −60 VCollector-emitter voltage (Base open) V CEO IC = −2 mA, I B = 0 −50 VEmitter-base voltage (Collector open) V EBO IE = −10 μA, I C = 0 −7 VCollector-base cutoff current (Emitter open) ICBO V CB = −10 V, I E = 0 −100 nACollector-emitter cutoff current (Base open) ICEO V CE = −10 V, I B = 0 −1 μAForward current transfer ratio * h FE V CE = −10 V, I C = −2 mA 160 460 Collector-emitter saturation voltage V CE(sat) IC = −50 mA, I B = −5 mA − 0.3 VTransition frequency f T V CB = −10 V, I E = 1 mA, f = 200 MHz 80 MHzCollector output capacitance C ob V CB = −10 V, I E = 0, f = 1 MHz 3.5 pF(Common base, input open circuited)■ Electrical Characteristics T a = 25°C ± 3°CUnit: mm4.0±0.20.75 max.2.0±0.20.45(2.5) (2.5)0.7±0.12 31+0.20–0.100.45+0.20–0.107.63.0±0.2(0.8)(0.8)15.6±0.51: Emitter2: Collector3: BaseNS-B1 PackageRank Q R S No rankh FE 160 to 260 210 to 340 290 to 460 160 to 460Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. *: Rank classificationThis product complies with the RoHS Directive (EU 2002/95/EC).

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