Panasonic 2SA2161G Specifications

Panasonic 2SA2161G Specifications Manual pdf 1 page image

Transistors1Publication date: May 2007 SJC00383AEDThis product complies with the RoHS Directive (EU 2002/95/EC).2SA2161GSilicon PNP epitaxial planar typeFor general amplificationComplementary to 2SC6037G■ Features• Low collector-emitter saturation voltage V CE(sat)• SS-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing■ Absolute Maximum Ratings T a = 25°CParameter Symbol Rating UnitCollector-base voltage (Emitter open) V CBO −15 VCollector-emitter voltage (Base open) V CEO −12 VEmitter-base voltage (Collector open) V EBO −5 VCollector current IC −500 mAPeak collector current ICP −1 ACollector power dissipation PC 125 mWJunction temperature T j 125 °CStorage temperature Tstg −55 to +125 °CParameter Symbol Conditions Min Typ Max UnitCollector-base voltage (Emitter open) V CBO IC = −10 μA, IE = 0 −15 VCollector-emitter voltage (Base open) V CEO IC = −1 mA, I B = 0 −12 VEmitter-base voltage (Collector open) V EBO IE = −10 μA, I C = 0 −5 VCollector-base cutoff current (Emitter open) ICBO V CB = −15 V, I E = 0 − 0.1 μAForward current transfer ratio h FE V CE = −2 V, I C = −10 mA 270 680 Collector-emitter saturation voltage V CE(sat) IC = −200 mA, I B = −10 mA −250 mVTransition frequency f T V CB = −2 V, I E = 10 mA, f = 200 MHz 200 MHzCollector output capacitance C ob V CB = 10 V, I E = 0, f = 1 MHz 4.5 pF(Common base, input open circuited)■ Electrical Characteristics T a = 25°C ± 3°CNote) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.■ Package• CodeSSMini3-F3• Marking Symbol: 2U• Pin Name1. Base2. Emitter3. Collector

/ 4

Related manuals for Panasonic 2SA2161G