Panasonic MA2SD300G Specification Sheet

Schottky Barrier Diodes (SBD)1Publication date: October 2007 SKH00181AEDThis product complies with the RoHS Directive (EU 2002/95/EC).MA2SD300GSilicon epitaxial planar typeFor super high speed switching■ Features• Small reverse current: I R < 2 μA (at V R = 30 V)• Optimum for high frequency rectification because of its shortreverse recovery time t rr .■ Absolute Maximum Ratings T a = 25°CParameter Symbol Rating UnitReverse voltage VR 30 VRepetitive peak reverse voltage V RRM 30 VForward current (Average) I F(AV) 100 mAPeak forward current IFM 200 mANon-repetitive peak forward IFSM 1 Asurge current *Junction temperature T j 125 °CStorage temperature T stg −55 to +125 °CParameter Symbol Conditions Min Typ Max UnitForward voltage V F1 I F = 10 mA 0.38 0.44 VV F2 I F = 100 mA 0.51 0.58Reverse current IR1 V R = 10 V 0.3 μAIR2 V R = 30 V 2Terminal capacitance C t V R = 0 V, f = 1 MHz 9 pFReverse recovery time * t rr I F = I R = 100 mA 1 nsI rr = 10 mA, R L = 100 Ω■ Electrical Characteristics Ta = 25°C ± 3°CNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3. Absolute frequency of input and output is 250 MHz4. *: t rr measurement circuitNote) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)90%tp = 2 μst r = 0.35 nsδ = 0.05I F = 100 mAI R = 100 mAR L = 100 Ω10%Input Pulse Output PulseI rr = 10 mAt r t pt rrI FttBias Application Unit (N-50BU)Pulse Generator(PG-10N)Rs = 50 ΩWave FormAnalyzer(SAS-8130)R i = 50 Ω V RA■ Package• CodeSSMini2-F4• Pin Name1: Anode2: Cathode■ Marking Symbol: 8N

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