Panasonic MA3D750 Specification Sheet

Schottky Barrier Diodes (SBD)1Publication date: April 2004 SKH00043BEDMA3D750 (MA7D50), MA3D750A (MA7D50A)Silicon epitaxial planar type (cathode common)For switching mode power supply■ Features• Low forward voltage V F• High dielectric breakdown voltage: > 5 kV• Easy-to-mount, due to its V cut lead end■ Absolute Maximum Ratings T C = 25°CParameter Symbol Rating UnitRepetitive peak MA3D750 V RRM 40 Vreverse-voltage MA3D750A 45Forward current (Average) I F(AV) 10 ANon-repetitive peak forward IFSM 120 Asurge current *Junction temperature T j −40 to +125 °CStorage temperature T stg −40 to +125 °CParameter Symbol Conditions Min Typ Max UnitForward voltage V F I F = 5 A, T C = 25°C 0.55 VReverse current MA3D750 IR V R = 40 V, T C = 25°C 3 mAMA3D750A V R = 45 V, T C = 25°C 3Thermal resistance (j-c) R th(j-c) 3.0 °C/W■ Electrical Characteristics TC = 25°C ± 3°CUnit: mm1.4±0.21.6±0.20.8±0.1 0.55±0.152.54±0.305.08±0.501 2 32.6±0.12.9±0.24.6±0.2φ 3.2±0.13.0±0.59.9±0.315.0±0.513.7±0.24.2±0.2Solder DipNote) *: Half sine wave; 10 ms/cycleNote) The part numbers in the parenthesis show conventional part number.Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3. Absolute frequency of input and output is 150 MHz.1: Anode2: Cathode(Common)3: AnodeTO-220D-A1 PackageThis product complies with the RoHS Directive (EU 2002/95/EC).

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