Panasonic Rectifier Diodes MA2J115 (MA115) Specifications

Rectifier Diodes1Publication date: March 2004 SKC00002BEDMA2J115 (MA115)Silicon epitaxial planar typeFor small power current rectification■ Features• S-mini type package, allowing high-density mounting• High reverse voltage VR■ Absolute Maximum Ratings T a = 25°CParameter Symbol Conditions Min Typ Max UnitForward voltage V F I F = 200 mA 1.2 VReverse current IR V R = 200 V 200 nATerminal capacitance C t V R = 0 V, f = 1 MHz 4.5 pF■ Electrical Characteristics Ta = 25°C ± 3°CParameter Symbol Rating UnitReverse voltage VR 200 VMaximum peak reverse voltage V RM 200 VOutput current I O 200 mARepetitive peak forward current IFRM 600 μANon-repetitive peak forward IFSM 1 Asurge current *Junction temperature T j 150 °CStorage temperature T stg −55 to +150 °CNote) *: t = l sMarking Symbol: 1FNote) The part number in the parenthesis shows conventional part number.5˚5˚1.25±0.1 0.7±0.12.5±0.21.7±0.10.4±0.10 to 0.1(0.15)0.160.5±0.112 +0.1–0.060.35±0.10 to 0.1Unit: mm1: Anode2: CathodeEIAJ: SC-76 SMini2-F1 PackageNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. Absolute frequency of input and output is 3 MHz.This product complies with the RoHS Directive (EU 2002/95/EC).

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