SAMSUNG Proprietary-Contents may change without noticeThis Document can not be used without Samsung's authorization5. Block Diagrams5-15-1. RF Solution Block Diagram100 kHz+fmodREFIN VC-TCXOGSMDCS/PCSI+fmodI-Q+Q-~~VAPCVcc_RF_VCODiscrete3 rd OrderLoop Filterfc = ? kHz삼성전기 TX VCOVOG1810F27KRA (5.7X5.0X1.5)GSM = 880 ~ 915MHz(Vt=0.5V ~ 3.0V )kV = 55+-11 MHz/V TypDCS = 1710 ~ 1785MHz(Vt=0.5V ~ 3.0V )kV = 115+-23 MHz/V TypPout= 6.5+-3 dBm typ.,Ic <= 30mAHarmonics <= -10dBcMicro Devices Quadband PAMRF3146 (7 X 7)GSM: Pout = 35.0 dBm Eff=60%DCS: Pout= 33.0 dBm Eff = 55%RXONVcc_Tx_BURSTVBATENCLKDATADCS S/WOFFSET Mixer input power-16dBm max, -22dBm minf compRF =26MHzPhilips TransceiverUAA3536Pins IA,IB,QA and QBV IQ : 1.25V typ . , 1.15V min , 1.35V maxV mod : 0.5V ppQUADDIVPFDCPVREG~Vcc_RF_LOFracNDIV1:1/2VREG26MHzVcc_REF(2.4V typ.)Vcc_SYNFESW1FESW23WBUSCTLREGPWRENGSM/DCS/PCSDIVQUADPFDCPf TXIF60/114MHz+ I OUT--+FESWON(N,A)SYNONTXONGSM S/WPMUPCF50601HVSVDD1 (1.35V min 2.95V max , 150mA )VBat (3.6V typ 3.0V min)V_MODERF1_VDDRF2_VDDRF1_VDDSRF2_VDDSVDD2 (1.35V min 3.45V max , 150mA )VDD3 (1.35V min 3.45V max , 100mA )AVDD(1.35V min 2.65V max , 100mA )VCC_RX_TX (2.7V ,100mA )VCC_SYN (2.7V , 100mA )VCC_RF_VCO (2.7V , 100mA )VCC_CP (4.0V , 25mA )VCC_TX_BURST (2.7V , 100mA )PON_SYNTPON_TXEGSM_TX_MODE_SWVCC_RX_TXVc_EGSMDCS/PCS_TX_MODE_SWVc_DCSInvertercircuitsI OUTQ OUTQ OUTVc_PCSPCS_TX_MODE_SWVc_PCSVc_PCSVc_PCS(2.5~3.0V)VDD4 (1.35V min 3.45V max , 150mA )Ripple in passband = 2.0dB maxNTK FEMLMG003W-5106A(5.4*4.0*1.7mm)Imax = 10 mAFreq (MHz) Insertion LossEGSM_TX(880 ? 915) 1.28 dBEGSM_RX(925 ? 960) 4.0 dBDCS/PCS_TX(1710 - 1910) 1.5 dBAtten 2xfo : 30dB,25dB(GSM,DCS/PCS)3xfo : 25dB,25dB(GSM,DCS/PCS)DCS_RX(1805 -1880) 4.1 dBPCS_RX(1930 -1990) 4.1 dB