CHAPTER 20 ELECTRICAL SPECIFICATIONS ((T) product, (S) product, (R) product, (A) product)User’s Manual U16898EJ3V0UD 341(T), (S), (R), (A) product T A = −40 to + 85°CFlash Memory Programming Characteristics (T A = –40 to +85°C, 2.7 V ≤ VDD ≤ 5.5 V, V SS = 0 V)Parameter Symbol Conditions MIN. TYP. MAX. UnitSupply current I DD V DD = 5.5 V 7.0 mAErasure countNote 1(per 1 block)NERASE TA = −40 to +85°C 1000 Times4.5 V ≤ V DD ≤ 5.5 V 0.8 s3.5 V ≤ V DD < 4.5 V 1.0 sTA = −10 to +85°C,NERASE ≤ 1002.7 V ≤ V DD < 3.5 V 1.2 s4.5 V ≤ V DD ≤ 5.5 V 4.8 s3.5 V ≤ V DD < 4.5 V 5.2 sTA = −10 to +85°C,NERASE ≤ 10002.7 V ≤ V DD < 3.5 V 6.1 s4.5 V ≤ V DD ≤ 5.5 V 1.6 s3.5 V ≤ V DD < 4.5 V 1.8 sTA = −40 to +85°C,NERASE ≤ 1002.7 V ≤ V DD < 3.5 V 2.0 s4.5 V ≤ V DD ≤ 5.5 V 9.1 s3.5 V ≤ V DD < 4.5 V 10.1 sChip erase time TCERASETA = −40 to +85°C,NERASE ≤ 10002.7 V ≤ V DD < 3.5 V 12.3 s4.5 V ≤ V DD ≤ 5.5 V 0.4 s3.5 V ≤ V DD < 4.5 V 0.5 sTA = −10 to +85°C,NERASE ≤ 1002.7 V ≤ V DD < 3.5 V 0.6 s4.5 V ≤ V DD ≤ 5.5 V 2.6 s3.5 V ≤ V DD < 4.5 V 2.8 sTA = −10 to +85°C,NERASE ≤ 10002.7 V ≤ V DD < 3.5 V 3.3 s4.5 V ≤ V DD ≤ 5.5 V 0.9 s3.5 V ≤ V DD < 4.5 V 1.0 sTA = −40 to +85°C,NERASE ≤ 1002.7 V ≤ V DD < 3.5 V 1.1 s4.5 V ≤ V DD ≤ 5.5 V 4.9 s3.5 V ≤ V DD < 4.5 V 5.4 sBlock erase time TBERASETA = −40 to +85°C,NERASE ≤ 10002.7 V ≤ V DD < 3.5 V 6.6 sByte write time TWRITE TA = −40 to +85°C, NERASE ≤ 1000 150μsPer 1 block 6.8 msInternal verify TVERIFYPer 1 byte 27μsBlank check TBLKCHK Per 1 block 480μsRetention years TA = 85°CNote 2, N ERASE ≤ 1000 10 YearsNote 1. Depending on the erasure count (N ERASE ), the erase time varies. Refer to the chip erase time and blockerase time parameters.2. When the average temperature when operating and not operating is 85°C.Remark When a product is first written after shipment, “erase → write” and “write only” are both taken as one rewrite.
