PAMSTechnical DocumentationNSE–3System ModulePage 3 – 15Original 11/97SIM Card ConnectorPin Name Parameter Min Typ Max Unit Notes4 GND GND 0 0 V Ground3, 5 VSIM 5V SIM Card3V SIM Card4.82.85.03.05.23.2V Supply voltage6 DATA 5V Vin/Vout3V Vin/Vout4.002.80”1””0””1””0”VSIM0.5VSIM0.5V SIM dataTrise/Tfall max 1us2 SIMRST 5V SIM Card3V SIM Card4.02.8”1””1”VSIMVSIMV SIM reset1 SIMCLK FrequencyTrise/Tfall3.2525MHznsSIM clockInternal MicrophonePin Name Min Typ Max Unit Notes6 MICP 0.55 4.1 mV Connected to COBBA MIC2N input. Themaximum value corresponds to1 kHz, 0dBmO network level with input amplifiergain set to 32 dB. typical value is maxi-mum value – 16 dB.7 MICN 0.55 4.1 mV Connected to COBBA MIC2P input. Themaximum value corresponds to1 kHz, 0dBmO network level with input amplifiergain set to 32 dB. typical value is maxi-mum value – 16 dB.Infrared Module ConnectionsAn infrared transceiver module is designed to substitute an electricalcable between the phone and a PC. The infrared transceiver module is astand alone component capable to perform infrared transmitting and re-ceiving functions by transforming signals transmitted in infrared light fromand to electrical data pulses running in two wire asyncronous databus. InDCT3 the module is placed inside the phone at the top of the phone.Signal Parameter Min Typ Max Unit NotesIRON IR–module on/off 2.0 2.85 V Iout@2mAFBUS_RX IR receive pulse 0 0.8 VIR receive no pulse 2.0 2.85 VFBUS_TX IR transmit pulse 2.0 2.85 V Iout@2mAIR transmit no pulse 0 0.5 V