Panasonic 2SB1463G Specification Sheet

Panasonic 2SB1463G Specification Sheet Manual pdf 1 page image

Transistors1Publication date: May 2007 SJC00388AEDThis product complies with the RoHS Directive (EU 2002/95/EC).2SB1463GSilicon PNP epitaxial planar typeFor high breakdown voltage low-noise amplificationComplementary to 2SC2440G■ Features• High collector-emitter voltage (Base open) VCEO• Low noise voltage NV• SS-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing.■ Absolute Maximum Ratings T a = 25°CParameter Symbol Rating UnitCollector-base voltage (Emitter open) V CBO −150 VCollector-emitter voltage (Base open) V CEO −150 VEmitter-base voltage (Collector open) V EBO −5 VCollector current IC −50 mAPeak collector current ICP −100 mACollector power dissipation PC 125 mWJunction temperature T j 125 °CStorage temperature Tstg −55 to +125 °C■ Electrical Characteristics T a = 25°C ± 3°CNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. *: Rank classificationParameter Symbol Conditions Min Typ Max UnitCollector-emitter voltage (Base open) V CEO IC = −100 μA, I B = 0 −150 VEmitter-base voltage (Collector open) V EBO IE = −10 μA, IC = 0 −5 VCollector-base cutoff current (Emitter open) ICBO V CB = −100 V, I E = 0 −1 μAForward current transfer ratio * h FE V CE = −5 V, I C = −10 mA 130 330 Collector-emitter saturation voltage V CE(sat) IC = −30 mA, IB = −3 mA −1 VTransition frequency f T VCB = −10 V, IE = 10 mA, f = 200 MHz 200 MHzCollector output capacitance C ob V CB = −10 V, I E = 0, f = 1 MHz 4 pF(Common base, input open circuited)Noise voltage NV V CE = −10 V, I C = −1 mA, G V = 80 dB 150 mVR g = 100 kΩ, Function = FLATRank R Sh FE 130 to 220 185 to 330■ Package• CodeSSMini3-F3• Marking Symbol: I• Pin Name1. Base2. Emitter3. Collector

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