Panasonic 2SC2295 Specification Sheet

Panasonic 2SC2295 Specification Sheet Manual pdf 1 page image

1TransistorsPublication date: March 2003 SJC00112BED2SC2295Silicon NPN epitaxial planar typeFor high-frequency amplificationComplementary to 2SA1022■ Features• Optimum for RF amplification of FM/AM radios• High transition frequency f T• Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazinepacking■ Absolute Maximum Ratings T a = 25°CParameter Symbol Rating UnitCollector-base voltage (Emitter open) V CBO 30 VCollector-emitter voltage (Base open) V CEO 20 VEmitter-base voltage (Collector open) V EBO 5 VCollector current I C 30 mACollector power dissipation P C 200 mWJunction temperature T j 150 °CStorage temperature T stg −55 to +150 °CParameter Symbol Conditions Min Typ Max UnitCollector-base cutoff current (Emitter open) ICBO V CB = 10 V, I E = 0 0.1 μAForward current transfer ratio * h FE V CB = 10 V, IE = −1 mA 70 220 Transition frequency f T VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250 MHzNoise figure NF V CB = 10 V, I E = −1 mA, f = 5 MHz 2.8 4.0 dBReverse transfer impedance Z rb V CB = 10 V, I E = −1 mA, f = 2 MHz 22 50 ΩReverse transfer capacitance C re V CB = 10 V, I E = −1 mA, f = 10.7 MHz 0.9 1.5 pF(Common emitter)Unit: mm■ Electrical Characteristics T a = 25°C ± 3°C1: Base2: Emitter3: CollectorEIAJ: SC-59Mini3-G1 Package0.40+0.10–0.05(0.65) 1.50+0.25–0.052.8+0.2–0.3213(0.95) (0.95)1.9±0.12.90+0.20–0.050.16+0.10–0.060.4±0.25˚10˚0 to 0.1 1.1+0.2–0.11.1 +0.3–0.1Marking Symbol: VRank B Ch FE 70 to 140 110 to 220Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. *: Rank classificationThis product complies with the RoHS Directive (EU 2002/95/EC).

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