Panasonic 2SC1473 Specification Sheet

Panasonic 2SC1473 Specification Sheet Manual pdf 1 page image

1TransistorsPublication date: March 2004 SJC00105BED2SC1473, 2SC1473ASilicon NPN triple diffusion planar typeFor general amplification2SC1473 complementary to 2SA10182SC1473A complementary to 2SA1767■ Features• High collector-emitter voltage (Base open) V CEO• High transition frequency f T■ Absolute Maximum Ratings T a = 25°CParameter Symbol Rating UnitCollector-base voltage 2SC1473 V CBO 250 V(Emitter open) 2SC1473A 300Collector-emitter voltage 2SC1473 V CEO 200 V(Base open) 2SC1473A 300Emitter-base voltage (Collector open) V EBO 7 VCollector current IC 70 mAPeak collector current ICP 100 mACollector power dissipation PC 750 mWJunction temperature T j 150 °CStorage temperature Tstg −55 to +150 °C■ Electrical Characteristics T a = 25°C ± 3°C5.0±0.20.7±0.10.45 +0.15–0.12.5 +0.6–0.20.45+0.15–0.12.51 2 3+0.6–0.24.0±0.25.1±0.212.9±0.52.3±0.2 0.7±0.2Unit: mm1: Emitter2: Collector3: BaseEIAJ: SC-43A TO-92-B1 PackageParameter Symbol Conditions Min Typ Max UnitCollector-emitter voltage 2SA1473 V CEO IC = 100 μA, I B = 0 200 V(Base open) 2SA1473A 300Emitter-base voltage (Collector open) V EBO IE = 1 μA, I C = 0 7 VCollector-emitter cutoff 2SA1473 ICEO V CE = 120 V, T a = 60°C, I B = 0 1 μAcurrent (Base open) 2SA1473A V CE = 120 V, I B = 0 1Forward current transfer ratio * h FE V CE = 10 V, IC = 5 mA 60 220 Collector-emitter saturation voltage V CE(sat) IC = 50 mA, IB = 5 mA 1.2 VTransition frequency f T V CB = 10 V, I E = −10 mA, f = 200 MHz 50 80 MHzCollector output capacitance C ob V CB = 10 V, I E = 0, f = 1 MHz 10 pF(Common base, input open circuited)Rank Q Rh FE 60 to 150 100 to 220Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. *: Rank classificationThis product complies with the RoHS Directive (EU 2002/95/EC).

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