Panasonic 2SC3757 Specification Sheet

Panasonic 2SC3757 Specification Sheet Manual pdf 1 page image

Transistors1Publication date: February 2004 SJC00136CED2SC3757Silicon NPN epitaxial planar typeFor high-speed switching■ Features• Low collector-emitter saturation voltage VCE(sat)• Mini type package, allowing downsizing of the equipment and au-tomatic insertion through the tape packing and the magazinepacking■ Absolute Maximum Ratings T a = 25°CParameter Symbol Conditions Min Typ Max UnitCollector-base cutoff current (Emitter open) ICBO V CB = 15 V, I E = 0 0.1 μAEmitter-base cutoff current (Collector open) IEBO V EB = 4 V, IC = 0 0.1 μAForward current transfer ratio * h FE V CE = 1 V, IC = 10 mA 60 200 Collector-emitter saturation voltage V CE(sat) IC = 10 mA, IB = 1 mA 0.17 0.25 VBase-emitter saturation voltage V BE(sat) IC = 10 mA, IB = 1 mA 1.0 VTransition frequency f T VCB = 10 V, IE = −10 mA, f = 200 MHz 450 MHzCollector output capacitance C ob V CB = 10 V, I E = 0, f = 1 MHz 2 6 pF(Common base, input open circuited)Turn-on time t on Refer to the switching time measurement 17 nsTurn-off time t off circuit 17 nsStorage time t stg 10 ns■ Electrical Characteristics T a = 25°C ± 3°CUnit: mmParameter Symbol Rating UnitCollector-base voltage (Emitter open) V CBO 40 VCollector-emitter voltage (E-B short) V CES 40 VEmitter-base voltage (Collector open) V EBO 5 VCollector current I C 100 mAPeak collector current ICP 300 mACollector power dissipation P C 200 mWJunction temperature T j 150 °CStorage temperature T stg −55 to +150 °CMarking Symbol: 2Y0.40 +0.10–0.05(0.65) 1.50+0.25–0.052.8+0.2–0.3213(0.95) (0.95)1.9±0.12.90+0.20–0.050.16 +0.10–0.060.4±0.25˚10˚0 to 0.1 1.1+0.2–0.11.1 +0.3–0.11: Base2: Emitter3: CollectorEIAJ: SC-59Mini3-G1 PackageRank Q Rh FE 60 to 120 90 to 200Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. *: Rank classificationThis product complies with the RoHS Directive (EU 2002/95/EC).

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