Panasonic 2SC4656G Specification Sheet

Panasonic 2SC4656G Specification Sheet Manual pdf 1 page image

Transistors1Publication date: May 2007 SJC00393AEDThis product complies with the RoHS Directive (EU 2002/95/EC).2SC4656GSilicon NPN epitaxial planar typeFor high-frequency amplificationComplementary to 2SA1791G■ Features• High transition frequency f T• Small collector output capacitance (Common base, input open cir-cuited) C ob• SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing■ Absolute Maximum Ratings T a = 25°CParameter Symbol Rating UnitCollector-base voltage (Emitter open) V CBO 50 VCollector-emitter voltage (Base open) V CEO 50 VEmitter-base voltage (Collector open) V EBO 5 VCollector current IC 50 mACollector power dissipation PC 125 mWJunction temperature T j 125 °CStorage temperature Tstg −55 to +125 °CParameter Symbol Conditions Min Typ Max UnitCollector-base voltage (Emitter open) V CBO IC = 10 μA, IE = 0 50 VCollector-emitter voltage (Base open) V CEO IC = 1 mA, I B = 0 50 VEmitter-base voltage (Collector open) V EBO IE = 10 μA, IC = 0 5 VCollector-base cutoff current (Emitter open) ICBO V CB = 10 V, I E = 0 0.1 μACollector-emitter cutoff current (Base open) ICEO V CE = 10 V, I B = 0 100 μAForward current transfer ratio * h FE V CE = 10 V, IC = 2 mA 200 500 Collector-emitter saturation voltage V CE(sat) IC = 10 mA, IB = 1 mA 0.06 0.3 VTransition frequency f T V CB = 10 V, I E = −2 mA, f = 200 MHz 250 MHzCollector output capacitance C ob V CB = 10 V, I E = 0, f = 1 MHz 1.5 pF(Common base, input open circuited)■ Electrical Characteristics T a = 25°C ± 3°CNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. *: Rank classificationRank Q Rh FE 200 to 400 250 to 500■ Package• CodeSSMini3-F3• Marking Symbol: AM• Pin Name1. Base2. Emitter3. Collector

/ 4

Related manuals for Panasonic 2SC4656G