Schottky Barrier Diodes (SBD)Publication date: February 2008 SKH00141CED 1This product complies with the RoHS Directive (EU 2002/95/EC).MA22D39Silicon epitaxial planar typeFor high speed switching circuits Features Optimum for forward current (Effective value) IF(RMS) = 1.57 A rectification Reverse voltage VR = 40 V is guaranteed Absolute Maximum Ratings Ta = 25°CParameter Symbol Rating UnitReverse voltage VR 40 VMaximum peak reverse voltage VRM 40 VForward current (Effective value) *1 IF(RMS) 1.57 ANon-repetitive peak forward surge current *2 IFSM 30 AJunction temperature Tj 150 °CStorage temperature Tstg –55 to +150 °CNote) *1: Mounted on an alumina PC board*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Electrical Characteristics Ta = 25°C±3°CParameter Symbol Conditions Min Typ Max UnitForward voltageVF1 IF = 0.5 A 0.48VVF2 IF = 1.1 A 0.54VF3 IF = 1.5 A 0.57Reverse current IR VR = 40 V 100 mATerminal capacitance Ct VR = 10 V, f = 1 MHz 50 pFReverse recovery time * trrIF = IR = 100 mA, Irr = 10 mA,RL = 100 W 30 nsNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakageof current from the operating equipment.3. *: trr measurement circuitBias Application Unit (N-50BU)90%Pulse Generator(PG-10N)Rs = 50 ΩWave Form Analyzer(SAS-8130)Ri = 50 Ωtp = 2 μstr = 0.35 nsδ = 0.05IF = IR = 100 mARL = 100 Ω10%Input Pulse Output PulseIrr = 10 mAtr tptrrV RIFttA Package CodeMini2-F1 Pin Name1: Anode2: Cathode Marking Symbol: 3N