Fast Recovery Diodes (FRD)Publication date: November 2008 SKJ00022AED 1This product complies with the RoHS Directive (EU 2002/95/EC).MA24F70Silicon epitaxial planar typeFor high speed switching circuits Features Super high speed switching characteristic: trr = 15 ns (typ.) Low impedance by clip bonding package (TMP) Absolute Maximum Ratings Ta = 25°CParameter Symbol Rating UnitRepetitive peak reverse voltage VRRM 700 VNon-repetitive peak reverse surge voltage VRSM 700 VForward current *1 IF 1.0 ANon-repetitive peak forward surge current *2 IFSM 20 AJunction temperature Tj -40 to +150 °CStorage temperature Tstg -40 to +150 °CNote) *1: Mounted on an alumina PC board*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Electrical Characteristics Ta = 25°C±3°CParameter Symbol Conditions Min Typ Max UnitForward voltage VF IF = 1.0 A 1.3 1.7 VReverse current IRRM VRRM = 700 V 20 mATerminal capacitance Ct VR = 0 V, f = 1 MHz 25 pFReverse recovery time * trrIF = 0.5 A, IR = 1.0 AIrr = 0.25 A 15 45 nsNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage ofcurrent from the operating equipment.3. *: trr measurement circuit50 Ω 50 Ω5.5 ΩD.U.T.IFIR0.25 × I Rtrr Package CodeTMiniP2-F1 Pin Name1: Anode2: Cathode Marking Symbol: H1