Zener DiodesPublication date: May 2005 SKE00023AED 1MAYS0750ZSilicon planar typeFor surge absorption circuits Features Features Small terminal capacitance C Small terminal capacitance C t High electrostatic discharge ESD High electrostatic discharge ESD Absolute Maximum Ratings Absolute Maximum Ratings Ta = 25a = 25a °CParameter Symbol Rating UnitTotal power dissipation *1 PT 150 mWJunction temperature TjTjT 150 °CStorage temperature TstgTstgT –55 to +150 °CElectrostatic discharge *2 ESD ±12 kVNote) *1 : PT = 150 mW achieved with a printed circuit board.*2 : Test method: IEC61000-4-2(C = 150 pF, R = 330 Ω, Contact discharge: 10 times) Electrical Characteristics Electrical Characteristics Ta = 25a = 25a °C±3°CParameter Symbol Conditions Min Typ Max UnitBreakdown voltage * VBRVBRV IR = 1 mAR = 1 mAR 6.0 7.5 VReverse current IR VR = 5 VR = 5 VR 2 μATerminal capacitance Ct IR = 0 V, f = 1 MHzR = 0 V, f = 1 MHzR 1.5 3.0 pFNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. *: VZ guaranted 20 ms after current flow.Marking Symbol: CZUnit: mm1: Anode2: CathodeEIAJ: SC-79 SSMini2-F1 Package0.80 +0.05–0.030.60 +0.05–0.030.12 +0.05–0.021.20 +0.05–0.030 +0–0.050.30±0.050.01±0.011.60±0.050.01±0.01120.80±0.05(0.80)(0.60)(0.15)(0.60)5°5°This product complies with the RoHS Directive (EU 2002/95/EC).