Zener Diodes1Publication date: November 2005 SKE00008DEDMAZ9xxxH SeriesSilicon planar typeFor surge absorption circuit■ Features• Two elements anode-common type• Power dissipation P D : 200 mW■ Absolute Maximum Ratings T a = 25°CUnit: mmParameter Symbol Rating UnitPower dissipation * P D 200 mWJunction temperature T j 150 °CStorage temperature T stg −55 to +150 °C■ Common Electrical Characteristics Ta = 25°C ± 3°CNote) *: P D = 200 mW achieved with a printed circuit board.Parameter Symbol Conditions Min Typ Max UnitZener voltage * V Z I Z Specified value VZener rise operating resistance R ZK I Z Specified value ΩZener operating resistance R Z I Z Specified value ΩReverse current IR VR Specified value μA0.40+0.10–0.05(0.65) 1.50+0.25–0.052.8+0.2–0.3213(0.95) (0.95)1.9±0.12.90+0.20–0.050.16+0.10–0.060.4±0.25˚10˚0 to 0.1 1.1+0.2–0.11.1 +0.3–0.1Refer to the list of theelectrical characteristicswithin part numbersInternal Connection132Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. Electrostatic breakdown voltage: ±10 kVTest method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)3. *: The temperature must be controlled 25°C for V Z mesurement.V Z value measured at other temperature must be adjusted to V Z (25°C)V Z guaranted 20 ms after current flow.1: Cathode 12: Cathode 23: AnodeEIAJ: SC-59 Mini3-G1 PackageThis product complies with the RoHS Directive (EU 2002/95/EC).