Panasonic MA27111 Specification Sheet

Switching Diodes1Publication date: November 2003 SKF00066BEDMA27111Silicon epitaxial planar typeFor high-speed switching circuits■ Features• High-density mounting is possible• Short reverse recovery time t rr• Small terminal capacitance C t■ Absolute Maximum Ratings T a = 25°CParameter Symbol Rating UnitReverse voltage VR 80 VMaximum peak reverse voltage V RM 80 VForward current IF 100 mAPeak forward current IFM 225 mANon-repetitive peak forward IFSM 500 mAsurge current *Junction temperature T j 150 °CStorage temperature T stg −55 to +150 °C■ Electrical Characteristics T a = 25°C ± 3°CParameter Symbol Conditions Min Typ Max UnitForward voltage V F I F = 100 mA 0.95 1.20 VReverse voltage VR I R = 100 μA 80Reverse current IR V R = 75 V 100 nATerminal capacitance C t V R = 0 V, f = 1 MHz 0.6 2.0 pFReverse recovery time * t rr I F = 10 mA, VR = 6 V 3 nsI rr = 0.1 I R , R L = 100 ΩBias Application Unit N-50BU90%Pulse Generator(PG-10N)Rs = 50 ΩWave Form Analyzer(SAS-8130)Ri = 50 Ωtp = 2 μstr = 0.35 nsδ = 0.05I F = 10 mAVR = 6 VRL = 100 Ω10%Input Pulse Output PulseI rr = 0.1 IRtr tptrrVRIFttAUnit: mmNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. Absolute frequency of input and output is 10 MHz.3. *: t rr measurement circuit1: Anode2: CathodeSSSMini2-F2 PackageMarking Symbol: S5°5°0.27211.40 ±0.050.52 ±0.031.00 ±0.050.60 ±0.050.15 min.0 to 0.010.15 min.0.15 max.+0.05–0.02 0.13+0.05–0.02Note) *: t = 1 sThis product complies with the RoHS Directive (EU 2002/95/EC).

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