1Publication date: March 2004 SKL00007BEDPIN diodesMA27P01Silicon epitaxial planar typeFor high frequency switch■ Features• Small terminal capacitance Ct• Small forward dynamic resistance r f• Ultraminiature package and surface mounting type1.0 mm × 0.6 mm (height: 0.52 mm)■ Absolute Maximum Ratings T a = 25°CUnit: mmParameter Symbol Rating UnitReverse voltage VR 60 VForward current IF 100 mAPower dissipation * P D 150 mWJunction temperature T j 150 °CStorage temperature T stg −55 to +150 °C Marking Symbol: N1: Anode2: CathodeSSSMini2-F2 Package5°5°0.27211.40±0.050.52±0.031.00±0.050.60 ±0.050.15 min.0 to 0.010.15 min.0.15 max.+0.05–0.02 0.13+0.05–0.02Parameter Symbol Conditions Min Typ Max UnitForward voltage VF IF = 10 mA 1.0 VReverse current IR VR = 60 V 100 nATerminal capacitance C t VR = 1 V, f = 1 MHz 0.8 pFForward dynamic resistance * rf IF = 10 mA, f = 100 MHz 1.0 Ω■ Electrical Characteristics Ta = 25°C ± 3°CNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. *: r f measurement device ; agilent model 4291BNote) *: With a glass epoxy PC boardThis product complies with the RoHS Directive (EU 2002/95/EC).