Panasonic MA27D29 Specification Sheet

Schottky Barrier Diodes (SBD)1Publication date: January 2004 SKH00128BEDMA27D29Silicon epitaxial planar typeFor super high speed switching■ Features• Low forward voltage: V F < 0.42 V (at I F = 100 mA)• Optimum for high frequency rectification because of its shortreverse recovery time t rr .■ Absolute Maximum Ratings T a = 25°CParameter Symbol Rating UnitReverse voltage VR 30 VRepetitive peak reverse voltage V RRM 30 VForward current (Average) I F(AV) 100 mAPeak forward current IFM 200 mANon-repetitive peak forward IFSM 1 Asurge current *Junction temperature T j 125 °CStorage temperature T stg −55 to +125 °CParameter Symbol Conditions Min Typ Max UnitForward voltage V F1 I F = 10 mA 0.25 0.29 VV F2 I F = 100 mA 0.39 0.42 VReverse current IR1 V R = 10 V 25 μAIR2 V R = 30 V 120 μATerminal capacitance C t V R = 0 V, f = 1 MHz 11 pFReverse recovery time * t rr I F = I R = 100 mA 1 nsI rr = 10 mA, R L = 100 Ω■ Electrical Characteristics Ta = 25°C ± 3°CMarking Symbol: 8MUnit: mmNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3. Absolute frequency of input and output is 250 MHz4. *: t rr measurement circuit1: Anode2: CathodeSSSMini2-F2 PackageNote) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)90%tp = 2 μstr = 0.35 nsδ = 0.05I F = 100 mAIR = 100 mAR L = 100 Ω10%Input Pulse Output PulseIrr = 10 mAt r t pt rrI FttBias Application Unit (N-50BU)Pulse Generator(PG-10N)R s = 50 ΩWave FormAnalyzer(SAS-8130)R i = 50 Ω V RA5°5°0.27121.40 ±0.050.52 ±0.031.00 ±0.050.60 ±0.050.20 ±0.050 to 0.010.20±0.050.15 max.+0.05–0.02 0.12+0.05–0.02This product complies with the RoHS Directive (EU 2002/95/EC).

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