Panasonic Transistors 2SC3938G Specifications

Transistors1Publication date: April 2007 SJC00364AEDThis product complies with the RoHS Directive (EU 2002/95/EC).2SC3938GSilicon NPN epitaxial planar typeFor high-speed switching■ Features• Low collector-emitter saturation voltage VCE(sat)• S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing■ Absolute Maximum Ratings T a = 25°CParameter Symbol Conditions Min Typ Max UnitCollector-base cutoff current (Emitter open) ICBO V CB = 40 V, I E = 0 0.1 μAEmitter-base cutoff current (Collector open) IEBO V EB = 4 V, IC = 0 0.1 μAForward current transfer ratio * h FE V CE = 1 V, IC = 10 mA 60 200 Collector-emitter saturation voltage V CE(sat) IC = 10 mA, IB = 1 mA 0.17 0.25 VBase-emitter saturation voltage V BE(sat) IC = 10 mA, IB = 1 mA 1 VTransition frequency f T V CB = 10 V, I E = −10 mA, f = 200 MHz 450 MHzCollector output capacitance C ob V CB = 10 V, I E = 0, f = 1 MHz 2 6 pF(Common base, input open circuited)Turn-on time t on Refer to the measurement circuit 17 nsTurn-off time t off 17 nsStorage time t stg 10 ns■ Electrical Characteristics T a = 25°C ± 3°CParameter Symbol Rating UnitCollector-base voltage (Emitter open) V CBO 40 VCollector-emitter voltage (E-B short) V CES 40 VEmitter-base voltage (Collector open) V EBO 5 VCollector current I C 100 mAPeak collector current ICP 300 mACollector power dissipation P C 150 mWJunction temperature T j 150 °CStorage temperature T stg −55 to +150 °CRank Q Rh FE 60 to 120 90 to 200Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. *: Rank classification■ Package• CodeSMini3-F2• Marking Symbol: 2Y• Pin Name1. Base2. Emitter3. Collector

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