Panasonic Transistors 2SC1318 Specifications

TransistorsPublication date : October 2008 SJC00420AED 1This product complies with the RoHS Directive (EU 2002/95/EC).2SC1318Silicon NPN epitaxial planar typeFor low-frequency power amplification and driver amplificationComplementary to 2SA0720 Features Low collector-emitter saturation voltage VCE(sat) Complementary pair with 2SA0720 Absolute Maximum Ratings Ta = 25°CParameter Symbol Rating UnitCollector-base voltage (Emitter open) VCBO 60 VCollector-emitter voltage (Base open) VCEO 50 VEmitter-base voltage (Collector open) VEBO 7 VCollector current IC 0.5 APeak collector current ICP 1 ACollector power dissipation PC 625 mWJunction temperature Tj 150 °CStorage temperature Tstg –55 to +150 °C Electrical Characteristics Ta = 25°C±3°CParameter Symbol Conditions Min Typ Max UnitCollector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 60 VCollector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 50 VEmitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 7 VCollector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 mAForward current transfer ratio hFE1 * VCE = 10 V, IC = 150 mA 85 340 hFE2 VCE = 10 V, IC = 500 mA 40Collector-emitter saturation voltage VCE(sat) IC = 300 mA, IB = 30 mA 0.35 0.60 VBase-emitter saturation voltage VBE(sat) IC = 300 mA, IB = 30 mA 1.1 1.5 VTransition frequency fT VCB = 10 V, IE = –50 mA, f = 200 MHz 200 MHzCollector output capacitance(Common base, input open circuited) Cre VCB = 10 V, IE = 0, f = 1 MHz 6 15 pFNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. *: Rank classificationRank Q R ShFE1 85 to 170 120 to 240 170 to 340 Package CodeTO-92B-B1 Pin Name1. Emitter2. Collector3. Base

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