Panasonic Transistors 2SC5846 Specifications

Transistors1Publication date: August 2003 SJC00298AED2SC5846Silicon NPN epitaxial planar typeFor general amplification■ Features• High forward current transfer ratio hFE• SSS-mini type package, allowing downsizing and thinning of theequipment and automatic insertion through the tape packing■ Absolute Maximum Ratings T a = 25°CParameter Symbol Conditions Min Typ Max UnitCollector-base voltage (Emitter open) V CBO I C = 10 μΑ, I E = 0 60 VCollector-emitter voltage (Base open) V CEO I C = 2 mA, I B = 0 50 VEmitter-base voltage (Collector open) V EBO I E = 10 μΑ, I C = 0 7 VCollector-base cutoff current (Emitter open) I CBO V CB = 20 V, I E = 0 0.1 μACollector-emitter cutoff current (Base open) I CEO V CE = 10 V, I B = 0 100 μAForward current transfer ratio h FE V CE = 10 V, I C = 2 mA 180 390 Collector-emitter saturation voltage V CE(sat) I C = 100 mA, I B = 10 mA 0.1 0.3 VCollector output capacitance C ob V CB = 10 V, I E = 0, f = 1 MHz 2.2 pF(Common base, input open circuited)Transition frequency f T VCB = 10 V, IE = −2 mA, f = 200 MHz 100 MHz■ Electrical Characteristics T a = 25°C ± 3°CUnit: mmParameter Symbol Rating UnitCollector-base voltage (Emitter open) V CBO 60 VCollector-emitter voltage (Base open) V CEO 50 VEmitter-base voltage (Collector open) V EBO 7 VCollector current I C 100 mAPeak collector current I CP 200 mACollector power dissipation P C 100 mWJunction temperature T j 125 °CStorage temperature T stg −55 to +125 °CMarking Symbol: 7K 1.20±0.050.52±0.030 to 0.010.15 max.5˚0.15 min.0.80±0.050.15 min.0.33(0.40)(0.40)1 235˚0.80±0.051.20±0.05+0.05–0.02 0.10+0.05–0.020.23 +0.05–0.021: Base2: Emitter3: CollectorSSSMini3-F1 PackageNote) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.SSSMini3-F1 PackageThis product complies with the RoHS Directive (EU 2002/95/EC).

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