Multi Chip DiscretePublication date: January 2008 SJJ00400BED 1This product complies with the RoHS Directive (EU 2002/95/EC).UP05C8GGSilicon NPN epitaxial planar type (Tr)Silicon epitaxial planar type (CCD load device)For CCD output circuits Features Two elements incorporated into one package (Tr + CCD load device) Costs can be reduced through downsizing of the equipment and reduction ofthe number of parts. Basic Part Number 2SC3932G + CCD load device Absolute Maximum Ratings Ta = 25°CParameter Symbol Rating UnitTrCollector-base voltage(Emitter open) VCBO 30 VCollector-emitter voltage(Base open) VCEO 20 VEmitter-base voltage(Collector open) VEBO 3 VCollector current IC 50 mACCDloaddeviceLimiting element voltage Vmax 40 VLimiting element current Imax 10 mAOverallTotal power dissipation * PT 125 mWJunction temperature Tj 125 °CStorage temperature Tstg –55 to +125 °CNote) * : Measuring on substrate at 17 mm × 10 mm × 1 mm Package CodeSSMini6-F2 Pin Name1: Emitter 4: Source2: Base 5: Drain3: Gate 6: Collector Marking Symbol: 4V Internal Connection3(G)(S)41(E) 2(B)(C)6 (D)5Tr FET