TOBY-L4 series - System Integration ManualUBX-16024839 - R04 Design-inPage 81 of 143Guidelines for single SIM chip connectionA solderable SIM chip (M2M UICC Form Factor) must be connected the SIM0 / SIM1 interface of TOBY-L4 seriesmodules as illustrated in Figure 38.Follow these guidelines to connect the module to a solderable SIM chip without SIM presence detection: Connect the UICC / SIM contact C1 (VCC) to the VSIM or the VSIM1 pin of the module. Connect the UICC / SIM contact C7 (I/O) to the SIM_IO or the SIM1_IO pin of the module. Connect the UICC / SIM contact C3 (CLK) to the SIM_CLK or the SIM1_CLK pin of the module. Connect the UICC / SIM contact C2 (RST) to the SIM_RST or the SIM1_RST pin of the module. Connect the UICC / SIM contact C5 (GND) to ground. Provide a 100 nF bypass capacitor (e.g. Murata GRM155R71C104K) at the SIM supply line close to therelative pad of the SIM chip, to prevent digital noise. Provide a bypass capacitor of about 22 pF to 47 pF (e.g. Murata GRM1555C1H470J) on each SIM line, toprevent RF coupling especially when the RF antenna is placed closer than 10 - 30 cm from the SIM lines. Limit the capacitance and series resistance on each SIM signal to match the SIM requirements (20.5 ns is themaximum rise time on the clock line, 1.0 μs is the maximum rise time on the data and reset lines).TOBY-L4 seriesVSIMxSIMx_IOSIMx_CLKSIMx_RSTSIM CHIPSIM ChipBottom View(contacts side)C1VPP (C6)VCC (C1)IO (C7)CLK (C3)RST (C2)GND (C5)C2 C3 C5U1C4283671C1 C5C2 C6C3 C7C4 C887651234Figure 38: Application circuits for the connection to a single solderable SIM chip, with SIM detection not implementedReference Description Part Number - ManufacturerC1, C2, C3, C4 47 pF Capacitor Ceramic C0G 0402 5% 50 V GRM1555C1H470JA01 - MurataC5 100 nF Capacitor Ceramic X7R 0402 10% 16 V GRM155R71C104KA01 - MurataU1 SIM chip (M2M UICC Form Factor) Various ManufacturersTable 29: Example of components for the connection to a single solderable SIM chip, with SIM detection not implemented