Panasonic Transistors 2SB1030A Specifications

TransistorsPublication date : October 2008 SJC00418AED 1This product complies with the RoHS Directive (EU 2002/95/EC).2SB1030ASilicon PNP epitaxial planar typeFor low-frequency amplificationComplementary to 2SD1423A Features Optimum for high-density mounting Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25°CParameter Symbol Rating UnitCollector-base voltage (Emitter open) VCBO –60 VCollector-emitter voltage (Base open) VCEO –50 VEmitter-base voltage (Collector open) VEBO –7 VCollector current IC – 0.5 APeak collector current ICP –1 ACollector power dissipation PC 300 mWJunction temperature Tj 150 °CStorage temperature Tstg –55 to +150 °C Electrical Characteristics Ta = 25°C±3°CParameter Symbol Conditions Min Typ Max UnitCollector-base voltage (Emitter open) VCBO IC = –10 mA, IE = 0 –60 VCollector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 VEmitter-base voltage (Collector open) VEBO IE = –10 mA, IC = 0 –7 VCollector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0 – 0.1 mACollector-Emitter cutoff current (Base open) ICEO VCE = –20 V, IB = 0 –1 mAForward current transfer ratio hFE1 * VCE = –10 V, IC = –150 mA 85 340 hFE2 VCE = –10 V, IC = –500 A 40Collector-emitter saturation voltage VCE(sat) IC = –300 mA, IB = –30 mA – 0.35 – 0.60 VTransition frequency fT VCB = –10 V, IE = 50 mA, f = 200 MHz 120 MHzCollector output capacitance(Common base, input open circuited) Cob VCB = –10 V, IE = 0, f = 1 MHz 3.5 15.0 pFNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. *: Rank classificationRank Q R ShFE1 85 to 170 120 to 240 170 to 340 Package CodeNS-B1 Pin Name1. Emitter2. Collector3. Base

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