Panasonic Transistors 2SB1722G Specifications

Transistors1Publication date: May 2007 SJC00389AEDThis product complies with the RoHS Directive (EU 2002/95/EC).2SB1722GSilicon PNP epitaxial planar typeFor high breakdown voltage low-frequency amplification■ Features• High collector-emitter voltage (Base open) V CEO• SS-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing■ Absolute Maximum Ratings T a = 25°CParameter Symbol Rating UnitCollector-base voltage (Emitter open) V CBO −100 VCollector-emitter voltage (Base open) V CEO −100 VEmitter-base voltage (Collector open) V EBO −5 VCollector current IC −20 mAPeak collector current ICP −50 mACollector power dissipation PC 125 mWJunction temperature T j 125 °CStorage temperature Tstg −55 to +125 °C■ Electrical Characteristics T a = 25°C ± 3°CParameter Symbol Conditions Min Typ Max UnitCollector-base voltage (Emitter open) V CBO IC = −10 μA, IE = 0 −100 VCollector-emitter voltage (Base open) V CEO IC = −1 mA, I B = 0 −100 VEmitter-base voltage (Collector open) V EBO IE = −10 μA, I C = 0 −5 VCollector-base cutoff current (Emitter open) ICBO V CB = −50 V, I E = 0 −100 nACollector-emitter cut-off current (Base open) ICEO V CE = −50 V, I B = 0 −1 μAForward current transfer ratio h FE V CE = −10 V, I C = −2 mA 200 700 Collector-emitter saturation voltage V CE(sat) IC = −10 mA, I B = −1 mA − 0.3 VTransition frequency f T VCB = −5 V, IE = 2 mA, f = 200 MHz 200 MHzNote) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.■ Package• CodeSSMini3-F3• Marking Symbol: 4R• Pin Name1. Base2. Emitter3. Collector

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