Panasonic Transistors 2SC5632G Specifications

Transistors1Publication date: June 2007 SJC00369AEDThis product complies with the RoHS Directive (EU 2002/95/EC).2SC5632GSilicon NPN epitaxial planar typeFor high-frequency amplification and switching■ Features• High transition frequency f T• S-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing■ Absolute Maximum Ratings T a = 25°CParameter Symbol Conditions Min Typ Max UnitCollector-base voltage (Emitter open) V CBO IC = 100 μA, I E = 0 15 VEmitter-base cutoff current (Collector open) IEBO V EB = 2 V, IC = 0 2 μAForward current transfer ratio h FE V CE = 4 V, I C = 2 mA 100 350 h FE ratio * ∆h FE h FE2 : V CE = 4 V, I C = 100 μA 0.6 1.5 h FE1: V CE = 4 V, I C = 2 mACollector-emitter saturation voltage V CE(sat) IC = 20 mA, IB = 4 mA 0.1 VTransition frequency f T V CE = 5 V, I C = 15 mA, f = 200 MHz 0.6 1.1 GHzCollector output capacitance C ob V CB = 10 V, I E = 0, f = 1 MHz 1.0 1.6 pF(Common base, input open circuited)■ Electrical Characteristics T a = 25°C ± 3°CParameter Symbol Rating UnitCollector-base voltage (Emitter open) V CBO 15 VCollector-emitter voltage (Base open) V CEO 8 VEmitter-base voltage (Collector open) V EBO 3 VCollector current I C 50 mACollector power dissipation P C 150 mWJunction temperature T j 150 °CStorage temperature T stg −55 to +150 °CNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. *: ∆h FE = h FE2 / h FE1■ Package• CodeSMini3-F2• Marking Symbol: 2R• Pin Name1: Base2: Emitter3: Collector

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