Panasonic Transistors 2SC3930G Specifications

Transistors1Publication date: April 2007 SJC00357AEDThis product complies with the RoHS Directive (EU 2002/95/EC).2SC3930GSilicon NPN epitaxial planar typeFor high-frequency amplificationComplementary to 2SA1532G■ Features• Optimum for RF amplification of FM/AM radios• High transition frequency f T• S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing■ Absolute Maximum Ratings T a = 25°CParameter Symbol Rating UnitCollector-base voltage (Emitter open) V CBO 30 VCollector-emitter voltage (Base open) V CEO 20 VEmitter-base voltage (Collector open) V EBO 5 VCollector current IC 30 mACollector power dissipation PC 150 mWJunction temperature T j 150 °CStorage temperature Tstg −55 to +150 °CParameter Symbol Conditions Min Typ Max UnitCollector-base cutoff current (Emitter open) ICBO V CB = 10 V, I E = 0 0.1 μAForward current transfer ratio * h FE V CB = 10 V, IE = −1 mA 70 220 Transition frequency f T V CB = 10 V, I E = −1 mA, f = 200 MHz 150 250 MHzNoise figure NF V CB = 10 V, I E = −1 mA, f = 5 MHz 2.8 4.0 dBReverse transfer impedance Z rb V CB = 10 V, I E = −1 mA, f = 2 MHz 22 50 ΩReverse transfer capacitance C re V CB = 10 V, I E = −1 mA, f = 10.7 MHz 0.9 1.5 pF(Common emitter)■ Electrical Characteristics T a = 25°C ± 3°CRank B Ch FE 70 to 140 110 to 220Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. *: Rank classification■ Package• CodeSMini3-F2• Marking Symbol: V• Pin Name1. Base2. Emitter3. Collector

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