NXP Semiconductors MPC5777M Datasheet

Also see for MPC5777M: Safety manual

Contents

NXP Semiconductors MPC5777M Datasheet Manual pdf 81 page image

Electrical characteristicsMPC5777M Microcontroller Data Sheet, Rev. 6NXP Semiconductors 813.15.2 Flash memory FERS program and erase specificationsTable 41. Flash memory FERS program and erase specifications (pending characterization)Symbol Characteristic 11 Program times are actual hardware programming times and do not include software overhead. Block program times assumequad-page programming.Factory Programming with FERS=1 and Vferspin is5V ± 5%22 Conditions: 150 cycles, nominal voltage.UnitsTyp33 Typical program and erase times represent the median performance and assume nominal supply values and operation at25 °C. Typical program and erase times may be used for throughput calculations.Initial Max Initial MaxFull Temp20°CTA30°C44 Plant Programming times provide guidance for timeout limits used in the factory.-40°CTJ150°C4tdwpgm Doubleword (64 bits) program time 30 90 135 μst ppgm Page (256 bits) program time 43 145 218 μst qppgn Quad-page (1024 bits) program time 134 530 795 μst 16kers 16 KB erase time 160 782 782 mst 16kpgn 16 KB program time 18 24 35 mst 32kers 32 KB erase time 190 782 782 mst 32kpgm 32 KB program time 36 47 68 mst 64kers 64 KB erase time 250 782 782 mst 64kpgm 64 KB program time 72 94 135 mst 256kers 256 KB erase time 600 1,380 2,070 mst 256kpgm 256 KB program time 288 374 568 ms