35CHAPTER 1 OUTLINE (μPD78058F SUBSERIES)1.1 FeaturesCompared to the conventionalμPD78054 Subseries, EMI (Electro Magnetic Interference) noise has beenreduced.On-chip high-capacity ROM and RAMProgram Memory(ROM)Part NumberItemμPD78056FμPD78058FμPD78P058F48 Kbytes60 Kbytes60 KbytesNote 1Internal High-Speed RAM Internal Buffer RAM Internal Expansion RAM1024 bytes 32 bytes None1024 bytes1024 bytesNote 1 1024 bytesNote 2Data MemoryNotes 1. The capacities of internal PROM and internal high-speed RAM can be changed by means of thememory size switching register (IMS).2. The capacity of internal expansion RAM can be changed by means of the internal expansion RAMsize switching register (IXS).External Memory Expansion Space: 64 KbytesMinimum instruction execution time changeable from high speed (0.4μs: In main system clock 5.0 MHz operation)to ultra-low speed (122μs: In subsystem clock 32.768-kHz operation)Instruction set suited to system control• Bit manipulation possible in all address spaces• Multiply and divide instructions69 I/O ports: (4 N-ch open-drain ports)8-bit resolution A/D converter: 8 channels8-bit resolution D/A converter: 2 channelsSerial interface: 3 channels• 3-wire serial I/O/SBI/2-wire serial I/O mode: 1 channel• 3-wire serial I/O mode (Automatic transmit/receive function): 1 channel• 3-wire serial I/O/UART mode: 1 channelTimer: 5 channels• 16-bit timer/event counter : 1 channel• 8-bit timer/event counter : 2 channels• Watch timer : 1 channel• Watchdog timer : 1 channel22 vectored interrupt sourcesTwo test inputsTwo types of on-chip clock oscillators (main system clock and subsystem clock)Supply voltage: V DD = 2.7 to 6.0 V
