Chapter 19 Flash Module (S12ZFTMRZ)MC9S12ZVMB Family Reference Manual Rev. 1.3662 NXP Semiconductors19.4.7.15 Program EEPROM CommandThe Program EEPROM operation programs one to four previously erased words in the EEPROM block.The Program EEPROM operation will confirm that the targeted location(s) were successfully programmedupon completion.CAUTIONA Flash word must be in the erased state before being programmed.Cumulative programming of bits within a Flash word is not allowed.Upon clearing CCIF to launch the Program EEPROM command, the user-supplied words will betransferred to the Memory Controller and be programmed if the area is unprotected. The CCOBIX indexvalue at Program EEPROM command launch determines how many words will be programmed in theEEPROM block. The CCIF flag is set when the operation has completed.19.4.7.16 Erase EEPROM Sector CommandThe Erase EEPROM Sector operation will erase all addresses in a sector of the EEPROM block.Table 19-64. Program EEPROM Command FCCOB RequirementsRegister FCCOB ParametersFCCOB0 0x11 Global address [23:16] toidentify the EEPROM blockFCCOB1 Global address [15:0] of word to be programmedFCCOB2 Word 0 program valueFCCOB3 Word 1 program value, if desiredFCCOB4 Word 2 program value, if desiredFCCOB5 Word 3 program value, if desiredTable 19-65. Program EEPROM Command Error HandlingRegister Error Bit Error ConditionFSTATACCERRSet if CCOBIX[2:0] < 010 at command launchSet if CCOBIX[2:0] > 101 at command launchSet if command not available in current mode (see Table 19-29)Set if an invalid global address [23:0] is suppliedSet if a misaligned word address is supplied (global address [0] != 0)Set if the requested group of words breaches the end of the EEPROM blockFPVIOL Set if the selected area of the EEPROM memory is protectedMGSTAT1 Set if any errors have been encountered during the verify operationMGSTAT0 Set if any non-correctable errors have been encountered during the verifyoperation