32.1.9 Simultaneous operations on PFLASH read partitionsWhile executing from a particular PFLASH read partition , FTFC commands (exceptparallel boot) cannot run over that PFLASH read partition. Below are number ofPFLASH read partitions in each device:Table 32-14. PFLASH partitionsChip No. of PFLASH read partitionsWCT1014S 1 (512 KB)WCT1015S 2 (each 512 KB)WCT1016S 3 (each 512 KB)32.2 IntroductionThe FTFC module includes the following accessible memory regions:• Program flash memory for vector space and code store• FlexNVM for data store and additional code store• FlexRAM for high-endurance data store or traditional RAMFlash memory is ideal for single-supply applications, permitting in-the-field erase andreprogramming operations without the need for any external high voltage power sources.The FTFC module includes a memory controller that executes commands to modify flashmemory contents. An erased bit reads '1' and a programmed bit reads '0'. Theprogramming operation is unidirectional; it can only move bits from the '1' state (erased)to the '0' state (programmed). Only the erase operation restores bits from '0' to '1'; bitscannot be programmed from a '0' to a '1'.CAUTIONA flash memory location must be in the erased state beforebeing programmed. Cumulative programming of bits (back-to-back program operations without an intervening erase) within aflash memory location is not allowed. Re-programming ofexisting 0s to 0 is not allowed as this overstresses the device.The standard shipping condition for flash memory is erasedwith security disabled. Data loss over time may occur due todegradation of the erased ('1') states and/or programmed ('0')IntroductionMWCT101xS Series Reference Manual, Rev. 3, 07/2019710 NXP Semiconductors
