NXP Semiconductors freescale K51 Series Reference Manual

Table 28-31. FTFL Commands by Mode (continued)FCMD Command NVM Normal NVM SpecialUnsecure Secure MEEN=10 Unsecure Secure MEEN=100x80 Program Partition × × × × — —0x81 Set FlexRAM Function × × × × — —28.4.10.4 Allowed Simultaneous Flash OperationsOnly the operations marked 'OK' in the following table are permitted to runsimultaneously on the program flash, data flash, and FlexRAM memories. Someoperations cannot be executed simultaneously because certain hardware resources areshared by the memories. The priority has been placed on permitting program flash readswhile program and erase operations execute on the FlexNVM and FlexRAM. Thisprovides read (program flash) while write (FlexNVM, FlexRAM) functionality.For devices containing FlexNVM:Table 28-32. Allowed Simultaneous Memory OperationsProgram Flash Data Flash FlexRAMRead Program SectorErase Read Program SectorErase Read E-Write1 R-Write2ProgramflashRead — OK OK OKProgram — OK OK OK3SectorErase — OK OK OKDataflashRead OK OK —Program OK — OK OKSectorErase OK — OK OKFlexRAMRead OK OK OK OK —E-Write1 OK —R-Write2 OK OK OK OK —1. When FlexRAM configured for EEPROM (writes are effectively multi-cycle operations).2. When FlexRAM configured as traditional RAM (writes are single-cycle operations).3. When FlexRAM configured as traditional RAM, writes to the RAM are ignored while the Program Section command isactive (CCIF = 0).For devices containing program flash only:Chapter 28 Flash Memory Module (FTFL)K51 Sub-Family Reference Manual, Rev. 6, Nov 2011Freescale Semiconductor, Inc. 647